Deep electron trap level in semi-insulating GaAs

Electron emission from deep level defects EL2 and EL6 in semi- insulating GaAs observed by positron drift velocity transient measurements

EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy

Field effect on positron diffusion in semi-insulating GaAs.

Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs

N. D. Jäger, Ph. Ebert, K. Urban, R. Krause-Rehberg, and E. R. Weber Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany Fachbereich Physik, Martin-Luther-Universität Halle, 06099 Halle, Germany Department of Materials Science, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 ~Received ...

Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.

Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling t...